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NP36P06SLG

MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06SLG

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06SLG-E1-AY

SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG-E1-AY

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG_15

SWITCHING P-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06KDG

-60V–-36A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=29.5m?Max.(VGS=-10V,ID=-18A) RDS(on)=37.5m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NP36P06SLG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
Renesas(瑞薩)
23+
標(biāo)準(zhǔn)封裝
8898
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Renesas(瑞薩)
23+
原廠封裝
32078
10年以上分銷商,原裝進(jìn)口件,服務(wù)型企業(yè)
 詢價
RENESAS/瑞薩
2024
TO-252
505348
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
 詢價
RENESAS
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
NEC
24+
TO-252
8866
詢價
NEC
24+
TO252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
Renesas
19+
TO-252
87439
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
Renesas
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEC
6000
面議
19
TO-252
 詢價
Renesas
18+
TO-252
41200
原裝正品,現(xiàn)貨特價
 詢價
更多NP36P06SLG供應(yīng)商 更新時間2025-2-22 13:32:00

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