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NP36P06SLG

MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP36P06SLG

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06SLG-E1-AY

SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG-E1-AY

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG_15

SWITCHING P-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06KDG

-60V–-36A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=29.5m?Max.(VGS=-10V,ID=-18A) RDS(on)=37.5m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NP36P06SLG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

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Renesas(瑞薩)
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8898
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Renesas(瑞薩)
23+
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32078
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RENESAS/瑞薩
2024
TO-252
505348
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
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NEC
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8866
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NEC
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87439
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更多NP36P06SLG供應(yīng)商 更新時(shí)間2024-10-27 10:00:00

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