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MJE3055TTU

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 60V 10A TO220-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

MJF3055(NPN) MJF2955(PNP) COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS,30WATTS Specificallydesignedforgeneralpurposeamplifierandswitchingapplications. Features ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopular

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS30WATTS

ComplementarySiliconPowerTransistors ...specificallydesignedforgeneralpurposeamplifierandswitchingapplications. ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopularMJE3055TandMJE2955T ?Collector–EmitterSustainingVoltage—VCEO(sus)90Volts

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJF3055

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055E

MEDIUMPOWERTMOSFET1.7AMP60VOLTS

N–ChannelEnhancementMode SiliconGateTMOSE–FET?SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–sourcediodewithafastrecoverytime

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055E

N-ChannelTMOSE-FETPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET? SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055V

TMOSPOWERFET1.7AMPERES60VOLTS

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055V

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055VL

TMOSPOWERFET1.5AMPERES60VOLT

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055VL

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMJD3055

SiliconNPNepitaxialplanerTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MTD3055E

TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount

TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055EL

TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features 12A,60V.RDS(ON)=0.15?@VGS=10V Lowgatecharge. Fastswitchingspe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD3055V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD3055V

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MJE3055TTU

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    管件

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    8V @ 3.3A,10A

  • 電流 - 集電極截止(最大值):

    700μA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    20 @ 4A,4V

  • 頻率 - 躍遷:

    2MHz

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220-3

  • 描述:

    TRANS NPN 60V 10A TO220-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD
24+
TO220
5000
原廠授權(quán)代理 價(jià)格絕對優(yōu)勢
詢價(jià)
FAIRCHILD
16+
原封裝
300
原裝現(xiàn)貨假一罰十
詢價(jià)
ONSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價(jià)
FAIRCHILD
22+23+
TO220
13410
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
安森美
21+
12588
原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
Fairchild
1930+
N/A
666
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詢價(jià)
FAIRCHILD/仙童
2021+
TO220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
ON
1809+
TO220-3
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
FAIRCHILD/仙童
21+
TO220
1709
詢價(jià)
更多MJE3055TTU供應(yīng)商 更新時(shí)間2024-12-24 10:20:00