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MJE800G

Plastic Darlington Complementary Silicon Power Transistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800G

Package：TO-225AA，TO-126-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN DARL 60V 4A TO126

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE800T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE800T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800T

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE800T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJS800-R

TYPEMJSLIGHTNINGSURGEWITHSTANDFUSE

bel

Bel Fuse Inc.

MLPV800

Low-ProfileAntennas-MLPVSeries

Features ?Attractive,low-profiledesignformaximumoverheadclearance ?Industryleadingwidebandperformanceprovidesoutstandingcoverageacross multiplefrequencybandswithnotuningrequired ?Wideband,multi-band,andnogroundplanemodelsavailable ?“Easygrip”HDmodelsavailable

PCTEL

PCTEL, Inc

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MJE800G

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    管件

  • 晶體管類型：

    NPN - 達(dá)林頓

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    2.5V @ 30mA，1.5A

  • 電流 - 集電極截止（最大值）：

    100μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    750 @ 1.5A，3V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-225AA，TO-126-3

  • 供應(yīng)商器件封裝：

    TO-126

  • 描述：

    TRANS NPN DARL 60V 4A TO126

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-225
1259
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
ON(安森美)
23+
TO-225
13999
公司只做原裝正品,假一賠十
 詢價
ON
24+
500
詢價
ON
23+
TO-225AA
7750
全新原裝優(yōu)勢
 詢價
ON
11+
3985
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
ON
2016+
TO-126
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
ON
23+
TO-126
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
22+23+
原廠原包
24358
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
24+
TO-126
9800
全新原裝正品現(xiàn)貨/長期大量供貨!!
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
更多MJE800G供應(yīng)商 更新時間2025-3-6 22:59:00

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