零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MGP20N60U | Insulated Gate Bipolar Transistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficie | Motorola Motorola, Inc | Motorola | |
MGP20N60U | Insulated Gate Bipolar Transistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | Motorola Motorola, Inc | Motorola | ||
600VSiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?Ultrafastbodydiode ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Reversepolarityavailableuponrequest | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
500VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
IGBT Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-CHANNELIGBT FEATURES ?Lowgatecharge ?TrenchFSTechnology, ?saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS ?Generalpurposeinverters ?UPS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features ?600V,20A ?VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features ?600V,20A ?VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UP | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-CHANNELIGBT APPLICATIONS ?Generalpurposeinverters ?UPS FEATURES ?Lowgatecharge ?TrenchFSTechnology, ?Saturationvoltage:VCE(sat),typ=1.85VIC=20AandTC=25°C | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON |
詳細參數
- 型號:
MGP20N60U
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
90000 |
詢價 | ||||
ON/安森美 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
ON/安森美 |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價 | ||
ON/安森美 |
23+ |
TO |
6000 |
原裝正品,支持實單 |
詢價 | ||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進口現貨,專注配單 |
詢價 | ||
ON/安森美 |
22+ |
TO |
99573 |
詢價 | |||
ON |
24+ |
TO |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
TYCO |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨 |
詢價 | ||
TYCO/泰科 |
21+ |
SMD |
10000 |
詢價 | |||
TYCO/泰科 |
22+ |
SMD |
9600 |
原裝現貨,優(yōu)勢供應,支持實單! |
詢價 |
相關規(guī)格書
更多- MGP21N60E
- MGP3002X
- MGP4N60ED
- MGP50-1000-C
- MGP50-1000-F
- MGP50-1000-J
- MGP50-1001-C
- MGP50-1001-F
- MGP50-1001-G
- MGP50-100-B
- MGP50-100-D
- MGP50-100-G
- MGP50-101-B
- MGP50-101-D
- MGP50-101-G
- MGP50-1023-BT10
- MGP50-102-B
- MGP50-102-D
- MGP50-102-G
- MGP50-103-B
- MGP50-103-D
- MGP50-103-G
- MGP50-10R0-B
- MGP50-10R0-D
- MGP50-10R0-G
- MGP50-1R00-B
- MGP50-1R00-D
- MGP50-1R00-G
- MGP50-1R0-B
- MGP50-1R0-D
- MGP50-1R0-G
- MGP50-3322-BT10
- MGP50-3402-BT10
- MGP50-3R32-FT50W
- MGP50F-1000-C
- MGP50F-1000-F
- MGP50F-1000-J
- MGP50F-1001-C
- MGP50F-1001-F
- MGP50F-1001-J
- MGP50F-100-C
- MGP50F-100-F
- MGP50F-100-J
- MGP50F-101-C
- MGP50F-101-F
相關庫存
更多- MGP25-PS
- MGP4N60E
- MGP50-1000-B
- MGP50-1000-D
- MGP50-1000-G
- MGP50-1001-B
- MGP50-1001-D
- MGP50-1001-FT50W
- MGP50-1001-J
- MGP50-100-C
- MGP50-100-F
- MGP50-100-J
- MGP50-101-C
- MGP50-101-F
- MGP50-101-J
- MGP50-1023-BT10W
- MGP50-102-C
- MGP50-102-F
- MGP50-102-J
- MGP50-103-C
- MGP50-103-F
- MGP50-103-J
- MGP50-10R0-C
- MGP50-10R0-F
- MGP50-10R0-J
- MGP50-1R00-C
- MGP50-1R00-F
- MGP50-1R00-J
- MGP50-1R0-C
- MGP50-1R0-F
- MGP50-1R0-J
- MGP50-3322-BT10W
- MGP50-3402-BT10W
- MGP50F-1000-B
- MGP50F-1000-D
- MGP50F-1000-G
- MGP50F-1001-B
- MGP50F-1001-D
- MGP50F-1001-G
- MGP50F-100-B
- MGP50F-100-D
- MGP50F-100-G
- MGP50F-101-B
- MGP50F-101-D
- MGP50F-101-G