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STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

*500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

TMUX582FPWTSEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582FPWTSEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TI1Texas Instruments

德州儀器

TMUX582F-SEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TI1Texas Instruments

德州儀器

TMUX582F-SEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEP±60-VProtected,Latch-upImmune8:1MultiplexerwithAdjustableFaultThresholdsinSpaceEnhancedPlastic

1Features ?Radiationhardened ?Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C ?ELDRSfreeto30krad(Si) ?Totalionizingdose(TID)RLATforeverywaferlot upto20krad(Si) ?TIDcharacterizedupto50krad(Si) ?Spaceenhancedplastic ?Supplyrange:8Vto22Vor±

TITexas Instruments

德州儀器美國德州儀器公司

TSB582

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

TSB582IDT

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細(xì)參數(shù)

  • 型號：

    M582A

  • 功能描述：

    M581A

供應(yīng)商型號品牌批號封裝庫存備注價格
一華
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
一華
24+
NA/
130
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
SK
23+
18600
正品原裝貨價格低
 詢價
24+
2
詢價
MM
23+
DIP-40
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
OKI
23+
DIP
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
OKI
1430+
DIP
5800
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品
 詢價
OKI
00+/01+
DIP18
456
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
OKI
2016+
 DIP
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
 詢價
OKI
24+
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
更多M582A供應(yīng)商 更新時間2025-4-24 11:00:00

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