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首頁 >M58BW016BB>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
M58BW016BB	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB100T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB100T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB100ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB100ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB80T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB80T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB80ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB80ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB90T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB90T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB90ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BB90ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BBT	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M58BW016BBZA	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS

詳細參數

型號：
M58BW016BB
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市拓億芯電子有限公司	M58BW016BB80T3ES	ST	23+	QFP	30000	代理全新原裝現貨,價格優(yōu)勢	詢價
深圳市明盛嘉電子科技有限公司	M58BW016BB80T3	ST/意法	21+	QFP	5000	原裝現貨/假一賠十/支持第三方檢驗	詢價
深圳市威爾健半導體有限公司	M58BW016BB80T3	ST/意法	23+	QFP	50000	全新原裝正品現貨,支持訂貨	詢價
深圳廊盛科技有限公司	M58BW016BB80T3	ST/意法	2022	QFP	80000	原裝現貨,OEM渠道,歡迎咨詢	詢價
貿澤芯城（深圳）電子科技有限公司	M58BW016BB80T3	ST/意法	23+	QFP-80	3000	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市遠進半導體有限公司	M58BW016BB80T3ES	ST	22	QFP	25000	3月31原裝,微信報價	詢價
中科航電（深圳）電子集團有限公司	M58BW016BB80T3F	ST		QFP-80L	93480	集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī)	詢價
深圳市得捷芯城科技有限公司	M58BW016BB80T3	ST/意法	23+	NA/	222	優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價
深圳市吉中創(chuàng)電子科技有限公司	M58BW016BB80T3ES	ST	23+	QFP	25000	原廠/代理渠道價格優(yōu)勢	詢價
艾睿國際（香港）有限公司	M58BW016DB	ST	2021+	BGA	100500	一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨	詢價

更多M58BW016BB供應商更新時間2024-12-30 16:36:00

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