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M58BW016DBT

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016DBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016DT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016DT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016DTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016DTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016FB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016FT

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016FT

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016FT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    M58BW016DBT

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
23+
QFP
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價(jià)
ST
QFP
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ST
QFP
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST
23+24
QFP
9800
原裝現(xiàn)貨.優(yōu)勢熱賣.終端BOM表可配單
 詢價(jià)
ST/意法
24+
QFP
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
MICRON/美光
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
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MICRON
1844+
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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MICRON/美光
24+
NA
20000
美光專營原裝正品
 詢價(jià)
MICRON/美光
22+
NA
8000
中賽美只做原裝 只有原裝
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MICRON
20+
IC
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
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更多M58BW016DBT供應(yīng)商 更新時(shí)間2024-12-30 18:09:00

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