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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
M58BW016DB	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYX numonyx	NUMONYX
M58BW016DB	文件：1.28397 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司	Micron
M58BW016DB100T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB100T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB100ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB100ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB70T3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB70T3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB70ZA3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB70ZA3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB7T3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYX numonyx	NUMONYX
M58BW016DB7T3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYX numonyx	NUMONYX
M58BW016DB7ZA3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYX numonyx	NUMONYX
M58BW016DB7ZA3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYX numonyx	NUMONYX
M58BW016DB80T3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB80T3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB80T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58BW016DB80T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號(hào)：
M58BW016DB
制造商：
STMICROELECTRONICS
制造商全稱(chēng)：
STMicroelectronics
功能描述：
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
艾睿國(guó)際（香港）有限公司	M58BW016DB	ST	2021+	BGA	100500	一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢(xún)價(jià)
中科航電（深圳）電子集團(tuán)有限公司	M58BW016DB	ST		BGA	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢(xún)價(jià)
深圳市一線半導(dǎo)體有限公司	M58BW016DB70T3F	BOSCH	24+	QFP-80	618		詢(xún)價(jià)
深圳誠(chéng)思涵科技有限公司	M58BW016DB70T3	ST	16+	QFP	2500	進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!	詢(xún)價(jià)
深圳市星佑電子有限公司	M58BW016DB80T3	ST	06+	?QFP-80	1000	全新原裝絕對(duì)有貨	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	M58BW016DB7T3TNS	ST	2016+	QFP	6528	只做進(jìn)口原裝現(xiàn)貨!假一賠十!	詢(xún)價(jià)
深圳市卓越微芯電子有限公司	M58BW016DB80T3F	ST	2020+	QFP	206	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢(xún)價(jià)
深圳市凌旭科技有限公司	M58BW016DB7T3TNS	ST	2016+	QFP	6000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢(xún)價(jià)
深圳市鵬和科技有限公司	M58BW016DB8T3FPT	ST	24+	QFP	5000	只做原裝公司現(xiàn)貨	詢(xún)價(jià)
深圳市亞泰盈科電子有限公司	M58BW016DB80T3	ST		QFP	10265	提供BOM表配單只做原裝貨值得信賴(lài)	詢(xún)價(jià)

更多M58BW016DB供應(yīng)商更新時(shí)間2024-12-29 11:00:00

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