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IXTP5N60P

PolarHVTM Power MOSFET

IXYS

IXYS Corporation

IXTP5N60P

PolarHV Power MOSFET

IXYS

IXYS Corporation

IXTP5N60P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JCS5N60B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical9pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60C

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60CB-O-C-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical9pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60CC-O-C-N-B

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60FB-O-F-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical9pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60FC-O-F-N-B

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60RB-O-R-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical9pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60RC-O-R-N-A

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60RC-O-R-N-B

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60VB-O-V-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical9pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS5N60VC-O-V-N-B

MAINCHARACTERISTICS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

KF5N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES

KECKEC CORPORATION

KEC株式會(huì)社

KF5N60D

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF5N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=4.5A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF5N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES

KECKEC CORPORATION

KEC株式會(huì)社

KF5N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=4.5A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF5N60P

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IXTP5N60P

  • 功能描述:

    MOSFET 5.0 Amps 600 V 1.6 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-220
473
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IXYS
23+
TO-220-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IXYS
23+
TO-220
5000
專做原裝正品,假一罰百!
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IXYS
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
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IXYS
24+
TO-220
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
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INFINEON/英飛凌
23+
TO252-3
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
IXYS
1931+
N/A
18
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IXYS/艾賽斯
2021+
TO-220
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
IXYS
1809+
TO-220
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
I
23+
TO-220
10000
公司只做原裝正品
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更多IXTP5N60P供應(yīng)商 更新時(shí)間2025-1-13 13:30:00