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IXTP7N60PM

isc N-Channel MOSFET Transistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤1.1?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequenc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP7N60PM

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectrical isolation ?Internationalstandardpackage ?Avanlancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings Appli

IXYS

IXYS Corporation

JCS7N60

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60B-O-B-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60C-O-C-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60F

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60FA

N-CHANNELMOSFET

APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60FA-O-F-N-B

N-CHANNELMOSFET

APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60F-O-F-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60S-O-S-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

KF7N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correctionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,

KECKEC CORPORATION

KEC株式會(huì)社

KF7N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correctionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,

KECKEC CORPORATION

KEC株式會(huì)社

KF7N60P

N-Channel600V(D-S)PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledriverequirement ?Improvedgate,avalancheanddynamicdV/dtruggedness ?Fullycharacterizedcapacitanceandavalanchevoltageandcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspeedpowerswit

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

KSM7N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSM7N60NZ

N-ChannelUniFETllMOSFET600V,6.5A,1.25

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB7N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD7N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF7N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF7N60NZ

N-ChannelUniFETllMOSFET600V,6.5A,1.25

KERSEMI

Kersemi Electronic Co., Ltd.

MDF7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTP7N60PM

  • 功能描述：

    MOSFET 7 Amps 600V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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I
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更多IXTP7N60PM供應(yīng)商 更新時(shí)間2025-1-10 15:21:00

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