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IXTH12N120

Power MOSFET, Avalanche Rated High Voltage

Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols ?UninterruptiblePowerSupplies(UPS) ?DCchoppers Advan

IXYS

IXYS Corporation

IXTH12N120

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KGT12N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

KGT12N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

MGV12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBTsarespecificallysuitedforapplicationsrequiringaguaran

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW12N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor ???????N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGW12N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode ???????N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltag

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGW12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

STF12N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTH12N120

  • 功能描述：

    MOSFET 12 Amps 1200V 1.300 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-247
4650
詢價(jià)
IXYS
23+
TO-247
9960
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IXYS場(chǎng)效應(yīng)
100
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24+
8866
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IXYS
24+
TO-247
5000
只做原裝公司現(xiàn)貨
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
20+
TO-247
36900
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IXYS/艾賽斯
2022+
19
全新原裝 貨期兩周
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IXYS
24+
TO-3P
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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IXYS
24+
TO-247
2000
進(jìn)口原裝現(xiàn)貨假一罰十.價(jià)格優(yōu)勢(shì).熱賣中..
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更多IXTH12N120供應(yīng)商 更新時(shí)間2025-3-29 16:44:00

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