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MGV12N120D中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGV12N120D規(guī)格書詳情
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost.
? High Power Surface Mount D3PAK Package
? High Speed Eoff: 160 J/A typical at 125°C
? High Short Circuit Capability – 10 s minimum
? Soft Recovery Free Wheeling Diode is included in the package
? Robust High Voltage Termination
產(chǎn)品屬性
- 型號(hào)：
MGV12N120D
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LAIRD/萊爾德 |
24+ |
SMD |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價(jià) | ||
Laird-Signal Integrity Product |
24+ |
非標(biāo)準(zhǔn) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
Laird |
21+ |
3000 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | |||
LAIRD |
SMD2016 |
22+ |
56000 |
全新原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
Laird-Signal Integrity Product |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) |
