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IXFR32N50Q

HiPerFET Power MOSFETs ISOPLUS247

IXYS

IXYS Corporation

IXFR32N50Q_04

HiPerFET Power MOSFETs ISOPLUS247

IXYS

IXYS Corporation

IXFT32N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFT32N50Q

HiPerFET??PowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox

IXYS

IXYS Corporation

IXFX32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX32N50

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXGH32N50B

HiPerFASTIGBT

VCES=500V IC25=60A VCE(sat)=2.0V tfi=80ns Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD Highcurrenthandlingcapability NewestgenerationHDMOSTMprocess MOSGateturn-on -drivesimplicity Appl

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFR32N50Q

  • 功能描述：

    MOSFET 30 Amps 500V 0.15 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

更多IXFR32N50Q供應商 更新時間2025-3-25 10:00:00

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