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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFET Power MOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTM Power MOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRF Power MOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFX24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRF Power MOSFETs F-Class: MegaHertz Switching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFX24N100Q3	文件：131.38 Kbytes Page：5 Pages	Advance Technical Information HiperFETPowerMOSFETsQ3-Class N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applica	IXYS IXYS Corporation	IXYS
IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Applications ?DC-DCconverters ?Batte	IXYS IXYS Corporation	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features ?HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode ?ISOPLUSI4-PAC?highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET?PowerMOSFETISOPLUS247?(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacit	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號：
IXFX24N100
功能描述：
MOSFET 24 Amps 1000V 0.39 Rds
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市坤融電子科技有限公司	IXFX24N100	IXYS/艾賽斯	24+	TO-247	5000	原廠授權(quán)代理價格絕對優(yōu)勢	詢價
深圳市星佑電子有限公司	IXFX24N100	IXY	06+	TO-247	1500	原裝	詢價
深圳市永貝爾科技有限公司	IXFX24N100	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
深圳市華來深電子有限公司	IXFX24N100	IXYS	23+	TO-247	8560	受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!	詢價
深圳兆威電子有限公司	IXFX24N100	IXYS/艾賽斯	22+	TO-247	32121	原裝正品現(xiàn)貨,可開13個點稅	詢價
深圳市納艾斯科技有限公司	IXFX24N100	IXYS	2020+	TO-247	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價
瀚佳科技(深圳)有限公司	IXFX24N100	IXYS	18+	TO-247	2050	公司大量全新原裝正品隨時可以發(fā)貨	詢價
深圳市艾宇欣科技有限公司	IXFX24N100	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物	詢價
深圳市科雨電子有限公司	IXFX24N100	IXYS	1809+	TO-247	326	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市國宇半導(dǎo)體科技有限公司	IXFX24N100	IXYS/艾賽斯	23+	TO-247MAX	10000	公司只做原裝正品	詢價

更多IXFX24N100供應(yīng)商更新時間2024-10-25 15:08:00

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