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IXFQ50N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=125mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ50N50P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

IXYS

IXYS Corporation

AWCCA-50N50

WirelessChargingCoilAssembly

ABRACON

Abracon Corporation

FDA50N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDA50N50

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDA50N50

50Ampere,500VoltN-ChannelPlanarProcessPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

FDA50N50

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?48A,500V,RDS(on)=0.105Ω@VGS=10V ?Lowgatecharge(typical105nC) ?LowCrss(typical45pF) ?Fastswitchin

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDA50N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDH50N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDH50N50

50Ampere,500VoltN-ChannelPlanarProcessPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

FDH50N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXFE50N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFK50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFR50N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFX50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX50N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

MTE50N50

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENTMODESILICONGATETMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    IXFQ50N50

  • 功能描述：

    MOSFET

  • N-Channel：

    Power MOSFET w/Fast Diode

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IXYS
1931+
N/A
53
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-3P
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
53
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO3P3 SC653
9000
原裝正品，支持實單
 詢價
IXYS
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
 詢價
24+
N/A
46000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多IXFQ50N50供應商 更新時間2025-1-15 14:16:00

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