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IXFR150N15

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackside) SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR150N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=105A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FIR150N15ANFG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

IXFH150N15P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V APPLICATIONS ·Switching ·Converters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH150N15P

PolarHT??HiPerFETPowerMOSFET

Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFK150N15

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier App

IXYS

IXYS Corporation

IXFK150N15P

PolarHT??HiPerFETPowerMOSFET

Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFN150N15

HiPerFETPowerMOSFET

SingleMOSFETDie Features ●Internationalstandardpackage ●Encapsulatingepoxymeets UL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●

IXYS

IXYS Corporation

IXFX150N15

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier App

IXYS

IXYS Corporation

IXFX150N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=150A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFR150N15

  • 功能描述：

    MOSFET 105 Amps 150V 0.0125 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
IXYS
22+
ISOPLUS247?
9000
原廠渠道,現(xiàn)貨配單
 詢(xún)價(jià)
IXYS
21+
ISOPLUS247?
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
IXYS
2022+
ISOPLUS247?
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
IXYS
22+
SOT-5439&NBS
4500
全新原裝品牌專(zhuān)營(yíng)
 詢(xún)價(jià)
IXYS/艾賽斯
22+
ISOPLUS247
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
IXYS
24+
ISOPLUS247
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
更多IXFR150N15供應(yīng)商 更新時(shí)間2025-3-26 10:18:00

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