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FDH50N50

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDH50N50

50Ampere,500Volt N-Channel Planar Process Power MOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

FDH50N50

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDH50N50_F133

500V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?48A,500V,RDS(on)=0.105Ω@VGS=10V ?Lowgatecharge(typical105nC) ?LowCrss(typical45pF) ?Fastswitchin

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDH50N50-F133

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXFE50N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFK50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFK50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFQ50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=125mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FDH50N50

  • 功能描述：

    MOSFET 500V N-Channel UniFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHILD/仙童
25+
TO-247
6500
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送
 詢價
FAIRCHILD
2016+
TO-247
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
24+
8866
詢價
FAIRCHILD
23+
TO-3PTO-3PF
8600
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHI
21+
TO-247
12588
原裝正品,自己庫存 假一罰十
 詢價
FAIRCHILD
20+
TO-247TO-3PTO-3PF
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FAIRCHI
2020+
TO-247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD
24+
TO-247
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多FDH50N50供應商 更新時間2025-3-29 10:22:00

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