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IXFP14N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=550mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP14N60P

PolarHV HiperFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Corporation

IXFP14N60P

Power MOSFET

IXYS

IXYS Corporation

IXFP14N60P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

IXYS

IXYS Corporation

IXTA14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP14N60P

PolarHVTMPowerMOSFET

IXYS

IXYS Corporation

IXTP14N60PM

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTQ14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGP14N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP14N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW14N60ED

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MS14N60

900VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號：

    IXFP14N60

  • 功能描述：

    MOSFET 600V 14A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IXYS/艾賽斯
23+
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10000
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295
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23+
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10000
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24+
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87
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3000
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更多IXFP14N60供應(yīng)商 更新時(shí)間2024-12-28 11:10:00

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