MGP14N60E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
相關(guān)芯片規(guī)格書(shū)
更多MGP14N60E規(guī)格書(shū)詳情
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 60 J/A typical at 125°C
? High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 10 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號(hào):
MGP14N60E
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
- 制造商:
ON Semiconductor
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢(xún)價(jià) | ||
TO-220 |
23+ |
NA |
15659 |
振宏微專(zhuān)業(yè)只做正品,假一罰百! |
詢(xún)價(jià) | ||
ON |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢(xún)價(jià) | |||
ON |
24+ |
90000 |
詢(xún)價(jià) | ||||
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) | ||
ON Semiconductor |
2022+ |
TO-220AB |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) | ||
ON/安森美 |
22+ |
TO-220 |
20000 |
保證原裝正品,假一陪十 |
詢(xún)價(jià) | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
ON/安森美 |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
ON |
2023+ |
TO-2203L |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) |