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IXFK27N80Q

HiPerFET Power MOSFETs Q-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInducti

IXYS

IXYS Corporation

IXFK27N80Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK27N80Q_02

HiPerFET Power MOSFETs Q-CLASS

IXYS

IXYS Corporation

IXFN27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN27N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80Q

HiPerFETPowerMOSFETsQ-Class

SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?EpoxymeetUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?IXYSadvancedlowQgprocess ?Ruggedpolysilicongatecellstructure

IXYS

IXYS Corporation

IXFR27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInducti

IXYS

IXYS Corporation

IXFX27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX27N80Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFX27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInducti

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFK27N80Q

  • 功能描述：

    MOSFET 27 Amps 800V 0.32 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA(IXFK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS原裝正品專賣價格
23+
TO-264
120000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
IXYS
23+
TO-264
65400
詢價
IXYS/艾賽斯
24+
TO-247
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價
 詢價
IXYS/艾賽斯
21+
NA
10
只做原裝,歡迎來電咨詢
 詢價
IXYS
2101
TO-264
1500
全新原裝公司現(xiàn)貨
詢價
IXYS/艾賽斯
24+
TO-264
5
只做原廠渠道 可追溯貨源
 詢價
IXYS
23+
TO-264
1500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IXYS
2019
TO-264
19700
INFINEON品牌專業(yè)原裝優(yōu)質(zhì)
 詢價
IXYS/艾賽斯
24+
TO-264
13550
只做原裝假一罰十
 詢價
更多IXFK27N80Q供應(yīng)商 更新時間2025-1-14 10:12:00

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