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IXFK26N60Q

HiPerFET Power MOSFETs Q-Class

Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi

IXYS

IXYS Corporation

IXFK26N60Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFR26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR26N60Q

HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS

HiPerFET?PowerMOSFETsISOPLUS247?Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2

IXYS

IXYS Corporation

IXFT26N60

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFT26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFT26N60Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa

IXYS

IXYS Corporation

IXFV26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFV26N60PS

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFX26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX26N60Q

HiPerFETPowerMOSFETsQ-Class

Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi

IXYS

IXYS Corporation

IXTH26N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH26N60P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTQ26N60P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTQ26N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTT26N60P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTV26N60P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTV26N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IXFK26N60Q

  • 功能描述：

    MOSFET 28 Amps 600V 0.25 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IXYS/艾賽斯
17+
TO-264
31518
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23+
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59620
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23+
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5000
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23+
NA
19960
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IXYS
18+
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2050
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189
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1931+
N/A
18
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1809+
TO-264
326
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23+
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10000
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22+
NA
18
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更多IXFK26N60Q供應商 更新時間2024-10-26 14:00:00

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