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FCB36N60N

N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCB36N60N

N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCB36N60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCB36N60NTM

N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCPF36N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCPF36N60NT

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFH36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFK36N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK36N60

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpol

IXYS

IXYS Corporation

IXFK36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN36N60

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpol

IXYS

IXYS Corporation

IXFR36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    FCB36N60N

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    N-Channel SupreMOS?? MOSFET 600 V, 36 A, 90 m??

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
21+
TO-263
1223
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
 詢價
FAI
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
FAI
22+23+
TO263
74226
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
FAIRCHILD/仙童
20+
TO-2633L(D2PAK)
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FSC
15+PBF
TO-263
800
優(yōu)勢
 詢價
FAIRCHILD/仙童
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
FAIRCHILD
21+
SOT-263
1270
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD/仙童
23+
TO-2633L(D2PAK)
32500
公司只做原裝正品
 詢價
FAIRCHILD/仙童
23+
TO-2633L(D2PAK)
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
22+
TO-263
3255
強(qiáng)勢庫存!原裝現(xiàn)貨!
 詢價
更多FCB36N60N供應(yīng)商 更新時間2024-11-6 19:47:00

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