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IXFH170N10P

Polar HiperFET Power MOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFH170N10P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

CEB170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR170N10PG

100VN-ChannelPowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR170N10RG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

IXFK170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFK170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFN170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXTK170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTK170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTT170N10P

PolarTMPowerMOSFET

IXYS

IXYS Corporation

IXTT170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IXFH170N10P

  • 功能描述:

    MOSFET 170 Amps 100V 0.009 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導體產品-原裝正品
詢價
IXYS/艾賽斯
23+
TO-247
32189
原裝正品 華強現(xiàn)貨
詢價
IXYS/艾賽斯
17+
TO-247
31518
原裝正品 可含稅交易
詢價
Littelfuse/IXYS
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
IXYS
24+
TO-247
8866
詢價
IXYS
18+
NA
3000
進口原裝正品優(yōu)勢供應
詢價
IXYS
22+23+
TO-247
36247
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
IXYS
21+
TO-247
12588
原裝正品,自己庫存 假一罰十
詢價
IXYS
24+
TO-247
35200
一級代理分銷/放心采購
詢價
IXYS
1931+
N/A
18
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更多IXFH170N10P供應商 更新時間2025-1-13 14:14:00