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IRG4PC50KPBF

Short Circuit Rated UltraFast IGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRF

International Rectifier

IRG4PC50KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50KPBF

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 52A 200W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC50KPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRF

International Rectifier

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

IRG4PC50U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

IRF

International Rectifier

IRG4PC50UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50UD

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

IRF

International Rectifier

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

IRF

International Rectifier

IRG4PC50W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRG4PC50KPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.2V @ 15V,30A

  • 開關能量:

    490μJ(開),680μJ(關)

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關)值:

    38ns/160ns

  • 測試條件:

    480V,30A,5 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應商器件封裝:

    TO-247AC

  • 描述:

    IGBT 600V 52A 200W TO247AC

供應商型號品牌批號封裝庫存備注價格
INFINEON/IR
13+
TO-247-3
500
詢價
INFINEON/IR
1907+
NA
500
20年老字號,原裝優(yōu)勢長期供貨
詢價
INFINEON/IR
13+
500
TO-247-3
詢價
IR
22+
TO-247
26550
原裝正品,實單請聯(lián)系
詢價
INFINEON/IR
23+
TO-247-3
500
原裝現(xiàn)貨支持送檢
詢價
INFINEON/英飛凌
19+
TO-247
9
正規(guī)渠道原裝正品
詢價
IR
16+
原廠封裝
17975
原裝現(xiàn)貨假一罰十
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
TO-247AC
20000
原裝正品
詢價
IR
18+
TO-247A
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
更多IRG4PC50KPBF供應商 更新時間2024-11-16 14:00:00