首頁 >IRG4PC50KPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4PC50KPBF | Short Circuit Rated UltraFast IGBT Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati | IRF International Rectifier | IRF | |
IRG4PC50KPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | |
IRG4PC50KPBF | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 52A 200W TO247AC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A) VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE StandarddSpeedCoPackIGBT | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號:
IRG4PC50KPBF
- 制造商:
Infineon Technologies
- 類別:
分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.2V @ 15V,30A
- 開關能量:
490μJ(開),680μJ(關)
- 輸入類型:
標準
- 25°C 時 Td(開/關)值:
38ns/160ns
- 測試條件:
480V,30A,5 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應商器件封裝:
TO-247AC
- 描述:
IGBT 600V 52A 200W TO247AC
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/IR |
13+ |
TO-247-3 |
500 |
詢價 | |||
INFINEON/IR |
1907+ |
NA |
500 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/IR |
13+ |
500 |
TO-247-3 |
詢價 | |||
IR |
22+ |
TO-247 |
26550 |
原裝正品,實單請聯(lián)系 |
詢價 | ||
INFINEON/IR |
23+ |
TO-247-3 |
500 |
原裝現(xiàn)貨支持送檢 |
詢價 | ||
INFINEON/英飛凌 |
19+ |
TO-247 |
9 |
正規(guī)渠道原裝正品 |
詢價 | ||
IR |
16+ |
原廠封裝 |
17975 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
TO-247AC |
20000 |
原裝正品 |
詢價 | |||
IR |
18+ |
TO-247A |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 |
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