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IRG4IBC20FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?VeryLow1.66Vvotagedrop ?2.5kV,60sinsulationvoltage ?4.8mmcreapagedistancetoheatsink ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?IGBTco-packagedwithHEXFREDTMultrafast,ultrasoftrecoveryantiparallel

IRF

International Rectifier

IRG4IBC20FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4IBC20FDPBF

包裝:管件 封裝/外殼:TO-220-3 整包 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 14.3A 34W TO220FP

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4IBC20FDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4IBC20KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) ?ShortCircuitRating10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration ?IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4IBC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4IBC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) ?ShortCircuitRating10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration ?IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4IBC20UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?2.5kV,60sinsulationvoltage ?4.8mmcreapagedistancetoheatsink ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes ?Tighte

IRF

International Rectifier

IRG4IBC20UDPBF

2.5kV,60sinsulationvoltage

IRF

International Rectifier

IRG4IBC20UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?2.5kV,60sinsulationvoltage ?4.8mmcreapagedistancetoheatsink ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes ?Tighte

IRF

International Rectifier

IRG4IBC20W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4IBC20W

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?2.5kV,60sinsulationvoltage ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduction

IRF

International Rectifier

IRG4IBC20WPBF

DesignedexpresslyforSwitch-ModePower

IRF

International Rectifier

IRG4IBC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRG4IBC20FDPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2V @ 15V,9A

  • 開(kāi)關(guān)能量:

    250μJ(開(kāi)),640μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    43ns/240ns

  • 測(cè)試條件:

    480V,9A,50 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商器件封裝:

    TO-220AB 整包

  • 描述:

    IGBT 600V 14.3A 34W TO220FP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/IR
10+
TO-220FP
1350
詢價(jià)
INFINEON/IR
1907+
NA
2500
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
IR
24+
TO-220
32
只做原廠渠道 可追溯貨源
詢價(jià)
INFINEON/IR
10+
1350
TO-220FP
詢價(jià)
INFINEON/IR
21+
TO-220F
60000
絕對(duì)原裝正品現(xiàn)貨,假一罰十
詢價(jià)
IR
24+
TO-220-3
373
詢價(jià)
IR
23+
TO-220FULLPAK
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
Infineon
18+
NA
3151
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR原裝
22+23+
TO-220
23774
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
更多IRG4IBC20FDPBF供應(yīng)商 更新時(shí)間2025-1-3 14:01:00