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IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarew

IRF

International Rectifier

IRFZ24N

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrols,these devicesareparticularlywellsuitedforbridgecircuitswhere diodespeedandcommutatingsafeoperatingareasarecritical andofferadditional

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFZ24N

Advanced Process Technology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessT

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ24N

HEXFET Power MOSFET

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicethatHEXFETpowerMOSFETsarewellknow

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFZ24NL

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRFZ24NL

Power MOSFET

PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A

TEL

TRANSYS Electronics Limited

IRFZ24NLPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ24NLPBF

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-262(DPAK)packaging ?Surfacemount ?Highspeedswitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFZ24NPBF

HEXFET Power MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFZ24NS

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFZ24

  • 功能描述：

    MOSFET N-Chan 60V 17 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
23+
TO-220
4600
原廠原裝正品
 詢價(jià)
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
臺(tái)產(chǎn)
23+
TO-220
1500
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
05+
原廠原裝
4866
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
SEC
24+
TO-220
101300
詢價(jià)
IR
2016+
TO-220
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IR
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
臺(tái)產(chǎn)
23+
TO-220
9960
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
更多IRFZ24供應(yīng)商 更新時(shí)間2025-4-1 15:03:00

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