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IRFZ24

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidet

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ24

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ24

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ24

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFZ24_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidet

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ24A

ADVANCED POWER MOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=60V ?LowerRDS(ON):0.050μ(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFZ24L

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRFZ24L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerw

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ24LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerw

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ24N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數

  • 型號：

    IRFZ24

  • 功能描述：

    MOSFET N-Chan 60V 17 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC
23+
TO-220
4600
原廠原裝正品
 詢價
IR
24+
N/A
8000
全新原裝正品,現貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
臺產
23+
TO-220
1500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
IR
23+
TO-220
35890
詢價
IR
05+
原廠原裝
4866
只做全新原裝真實現貨供應
 詢價
SEC
24+
TO-220
101300
詢價
IR
2016+
TO-220
6523
只做進口原裝現貨!或訂貨假一賠十!
 詢價
IR
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
臺產
23+
TO-220
9960
價格優(yōu)勢/原裝現貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
更多IRFZ24供應商 更新時間2025-3-28 16:26:00

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