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IRFS11N50APBF

Power MOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50APBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRFS11N50ATRL

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

RepetitiveAvalancheRated

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

HEXFETPowerMOSFET

IRF

International Rectifier

IRFSL11N50APBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFY11N50CMA

HEXFETPOWERMOSFETTHRU-HOLE(TO-257AA)

IRF

International Rectifier

IRFY11N50CMA

SimpleDriveRequirements

IRF

International Rectifier

KF11N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

KF11N50P/F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50PF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

詳細(xì)參數(shù)

  • 型號:

    IRFS11N50APBF

  • 功能描述:

    MOSFET N-Chan 500V 11 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
VISHAY
21+
TO-263-3 (D2PAK)
50
原裝正品 有掛有貨
詢價
VISHAY
14+
50
TO-263-3 (D2PAK)
詢價
VISHAY
23+
TO-263-3 (D2PAK)
50
原裝現(xiàn)貨支持送檢
詢價
VISHAY
14+
D2-PAK(TO-263)
2000
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
IR/VISH
24+
65230
詢價
VISHAY/威世
2021+
NA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
VISHAY
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
1923+
TO-263
6896
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
更多IRFS11N50APBF供應(yīng)商 更新時間2025-1-8 18:11:00