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IRFS23N20DPBF

SMPS MOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFS23N20DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFS23N20DPBF_15

High frequency DC-DC converters

IRF

International Rectifier

FMM23N20

2.3A20VN-ChannelEnhancement-ModeMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRFB23N20D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFS23N20DPBF

  • 功能描述：

    MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
4800
只做原廠渠道 可追溯貨源
 詢價
IR
23+
TO263
3260
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
IR
17+
TO-263
6200
詢價
IR
2018+
TO263
6528
只做原裝正品假一賠十!只要網上有上百分百有庫存放心
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
NA
10658
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
25+23+
TO263
72148
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
24+
65230
詢價
更多IRFS23N20DPBF供應商 更新時間2025-4-12 16:36:00

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