首頁 >IRFS11N50ATRL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFS11N50ATRL | Power MOSFET FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Power MOSFET FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
RepetitiveAvalancheRated | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFETTHRU-HOLE(TO-257AA) | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELD GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr | KECKEC CORPORATION KEC株式會社 | KEC | ||
N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr | KECKEC CORPORATION KEC株式會社 | KEC | ||
500VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
500VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
IRFS11N50ATRL
- 功能描述:
MOSFET N-Chan 500V 11 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR/FSC |
23+ |
TO-263 |
9500 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
VISHAY |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VISHAY/威世 |
23+ |
D2PAK |
10000 |
公司只做原裝正品 |
詢價 | ||
VB |
21+ |
D2PAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實(shí)單 |
詢價 | ||
IR |
22+ |
SOT263 |
8000 |
原裝正品支持實(shí)單 |
詢價 | ||
Vishay Siliconix |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原裝正品,支持實(shí)單 |
詢價 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 | ||
I |
22+ |
D2PAK |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 |
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