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IRFS11N50ATRL

Power MOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPBF

Power MOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

RepetitiveAvalancheRated

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

HEXFETPowerMOSFET

IRF

International Rectifier

IRFSL11N50APBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFY11N50CMA

HEXFETPOWERMOSFETTHRU-HOLE(TO-257AA)

IRF

International Rectifier

IRFY11N50CMA

SimpleDriveRequirements

IRF

International Rectifier

KF11N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50P

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

KF11N50P/F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KF11N50PF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會社

KSM11N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF11N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

NDF11N50Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    IRFS11N50ATRL

  • 功能描述:

    MOSFET N-Chan 500V 11 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR/FSC
23+
TO-263
9500
專業(yè)優(yōu)勢供應(yīng)
詢價
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
VISHAY/威世
23+
D2PAK
10000
公司只做原裝正品
詢價
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
詢價
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
詢價
IR
22+
SOT263
8000
原裝正品支持實(shí)單
詢價
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品,支持實(shí)單
詢價
Vishay Siliconix
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價
I
22+
D2PAK
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
更多IRFS11N50ATRL供應(yīng)商 更新時間2024-11-18 16:11:00