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IRFR9210TR

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210TR

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRL

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210TRL

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRLA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210TRLA

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR9210TF

  • 制造商：

    Samsung Semiconductor

  • 功能描述：

    IRFR9210TF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO-252
2000
只做原廠渠道 可追溯貨源
 詢價(jià)
FAIRCHILD
05+
原廠原裝
5216
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
FAIRCHILD
1816+
.
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
FAIRCHILD
24+
TO-252
35200
一級(jí)代理/放心采購
 詢價(jià)
FAIRCHILD
01+
TO-252
20000
現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
FAIRCHILD/仙童
1535+
900
詢價(jià)
FAIRCHILD/仙童
2022+
TO-252
2000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
F/C
25+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
24+
NA/
2000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
更多IRFR9210TF供應(yīng)商 更新時(shí)間2025-4-12 16:36:00

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