首頁(yè) >IRFN9240(2N7237U)>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
12A,200V,0.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-12A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-12A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=-10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWERMOSFETP-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-9.4A) PartNumberRds(on)IdEyelets IRFY9240C0.51?-9.4ACeramic IRFY9240CM0.51?-9.4ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-statere | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
P-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA PartNumberRds(on)IdEyelets IRFY9240C0.51?-9.4ACeramic IRFY9240CM0.51?-9.4ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-statere | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-9.4A) PartNumberRds(on)IdEyelets IRFY9240C0.51?-9.4ACeramic IRFY9240CM0.51?-9.4ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-statere | IRF International Rectifier | IRF |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
N/A |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢(xún)價(jià) | ||
IR |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
N/A |
7000 |
詢(xún)價(jià) | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
C-CCN-3 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢(xún)價(jià) | ||
IR |
18 |
SMD-1 |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢(xún)價(jià) | ||
24+ |
長(zhǎng)期備有現(xiàn)貨 |
500000 |
行業(yè)低價(jià),代理渠道 |
詢(xún)價(jià) | |||
IR |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
21+ |
TO-92L |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
FAIRCHILD |
22+ |
TO-92 |
58000 |
原裝現(xiàn)貨,OEM渠道。 |
詢(xún)價(jià) |
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