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IRFR9010

Power MOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

P-CHANNEL POWER MOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9010

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR9010PBF

Power MOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRLPBFA

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRPBFA

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRPBF

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFU9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR9010

  • 功能描述：

    MOSFET P-Chan 60V 5.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
06+
TO-252
15000
原裝庫(kù)存
 詢價(jià)
IR
23+
TO-252
35890
詢價(jià)
IR
1415+
TO-252
28500
全新原裝正品,優(yōu)勢(shì)熱賣
 詢價(jià)
IR
24+
原廠封裝
726
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-252
5000
原裝正品,假一罰十
 詢價(jià)
IR
23+
原廠原裝
3000
全新原裝
 詢價(jià)
IR
19+
TO-252
75043
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
VISHAY/威世通
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
更多IRFR9010供應(yīng)商 更新時(shí)間2025-3-10 14:32:00

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