首頁(yè) >IRFR3910>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IRFR3910

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR3910

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3910

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

IRF

International Rectifier

IRFR3910PBF

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910PBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TR

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3910TR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910TRLPBF

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR3910

  • 制造商：

    undefined

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N D-PAK

  • 功能描述：

    MOSFET Transistor, N-Channel, TO-252AA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-252
458000
詢(xún)價(jià)
IR
24+
TO-252
6468
只做原廠渠道 可追溯貨源
 詢(xún)價(jià)
TECH PUBLIC(臺(tái)舟)
24+
TO-252AA
5000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)。
 詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢(xún)價(jià)
INFINEON/英飛凌
13+
TO-252
3828
原裝進(jìn)口無(wú)鉛現(xiàn)貨
 詢(xún)價(jià)
IR
06+
TO-252
15000
原裝庫(kù)存
 詢(xún)價(jià)
IR
24+
TO-252
634
詢(xún)價(jià)
IR
23+
TO-252
35890
詢(xún)價(jià)
IR
24+
原廠封裝
2662
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢(xún)價(jià)
更多IRFR3910供應(yīng)商 更新時(shí)間2025-4-14 9:19:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多