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IRFN130SMD

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

SEME-LAB

Seme LAB

IRFN130SMD05

N??HANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFN130SMD05

N??HANNEL POWER MOSFET FOR HI??EL APPLICATIONS

SEME-LAB

Seme LAB

IRFNJ130N

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP130

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR130A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR130ATM

AvalancheRuggedTechnology

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR130ATM

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFRU130A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU130A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFY130

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY130

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130

SimpleDriveRequirements

IRF

International Rectifier

IRFY130C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130C

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY130CM

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.18ohm,Id=14.4A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFN130SMD

  • 功能描述:

    N-Channel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
詢(xún)價(jià)
24+
長(zhǎng)期備有現(xiàn)貨
500000
行業(yè)低價(jià),代理渠道
詢(xún)價(jià)
CHINA
22+
SMD-1
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
詢(xún)價(jià)
IR
22+
SMD-1
6000
終端可免費(fèi)供樣,支持BOM配單
詢(xún)價(jià)
INFINEON
23+
C-CCN-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢(xún)價(jià)
IR
23+
SMD-1
8000
只做原裝現(xiàn)貨
詢(xún)價(jià)
IR
23+
SMD-1
7000
詢(xún)價(jià)
IR
三年內(nèi)
1983
只做原裝正品
詢(xún)價(jià)
IR
23+
SMD
66800
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源!
詢(xún)價(jià)
IR
22+
NA
30000
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
更多IRFN130SMD供應(yīng)商 更新時(shí)間2025-1-18 9:02:00