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首頁 >IRFM224B>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFM224B	文件：705.97 Kbytes Page：8 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR224	文件：175.21 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)	IRF International Rectifier	IRF
IRFR224	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224	文件：331.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR224	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224	文件：368.21 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224A	文件：321.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR224B	文件：670.03 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR224PBF	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224PBF	文件：511.42 Kbytes Page：10 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFR224PBF	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224PBF	文件：4.12218 Mbytes Page：10 Pages	Dynamicdv/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224PBF	文件：368.2 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TR	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRA	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRL	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRL	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFM224B
制造商：
FAIRCHILD
制造商全稱：
Fairchild Semiconductor
功能描述：
250V N-Channel MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	IRFM224B	FAIRCHILD		SOT223	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市永貝爾科技有限公司	IRFM224B	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市仟禧電子有限公司	IRFM224B	FAIRCHILD/仙童	22+	SOT223	20000	保證原裝正品,假一陪十	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	IRFM224B	FAIRCHILD/仙童	22+	SOT223	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市晨豪科技有限公司	IRFM224B	FAIRCHILD/仙童	23+	SOT-223	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳龐田科技有限公司	IRFM224BTF	FAIRCHIL	2023+環(huán)保現(xiàn)貨	SOT-223	18000	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價(jià)
深圳市宏捷佳電子科技有限公司	IRFM224BTF	FAIRCHIL	2023+	SOT-223	50000	原裝現(xiàn)貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFM240	IR	24+	DIP	1		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRFM240	IR	23+	TO-254A	5000	原裝正品,假一罰十	詢價(jià)
上海專毅電子科技有限公司	IRFM240	IR	17+	DIP	9888	全新進(jìn)口原裝,現(xiàn)貨庫存	詢價(jià)

更多IRFM224B供應(yīng)商更新時(shí)間2024-12-25 14:00:00

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