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IRFN250

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A)

RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRF

International Rectifier

IRFN250

N??HANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFN250

SimpleDriveRequirements

IRF

International Rectifier

IRFN250SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP250

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP250

StandardPowerMOSFET

N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFM250U

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-254VAR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2022+
70
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
SMD
219
“芯達(dá)集團(tuán)”專(zhuān)營(yíng)軍工百分之百原裝進(jìn)口
 詢價(jià)
IR
24+
N/A
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
IR
24+
TO-220
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
專(zhuān)業(yè)軍工
NA
1000
只做原裝正品軍工級(jí)部分訂貨
 詢價(jià)
IR
1719
555
原裝正品
 詢價(jià)
IR
23+
TO-254A
90000
一定原裝正品
 詢價(jià)
IR
24+
TO-220
66800
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
IR
2020+
TO-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
更多IRFM250U供應(yīng)商 更新時(shí)間2025-3-21 15:00:00

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