| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
KSMD6N60 | Excellent package for good heat dissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
600V N-Channel MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET600V,6A,1.4ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,6A,1.4ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,6A,1.4ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,6A,1.4ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET6.0AMPERES600VOLTS TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswith | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET6.0AMPERES600VOLTS TMOSE-FET?HighEnergyPowerFETD2PAK-SLStraightLead N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET6.0AMPERES600VOLTS TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswith | Motorola Motorola, Inc | Motorola | ||
PowerFieldEffectTransistor | Motorola Motorola, Inc | Motorola | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
KERSEMI |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
KERSEMI |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價 | ||
KERSEMI |
23+ |
TO252 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
KERSEMI |
23+ |
TO-252 |
6000 |
原裝正品，支持實(shí)單 |
詢價 | ||
KERSEMI |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
KERSEMI |
24+ |
TO-252 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
KERSEMI |
1822+ |
TO-252 |
6852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價 | ||
KERSEMI |
2048+ |
TO-252 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
KUU |
23+ |
SOD123FL |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 |
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