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首頁 >IRFL9014TRPBF>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFL9014TRPBF	文件：1.03697 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9014TRPBF	文件：1.68613 Mbytes Page：7 Pages	P-Channel 60-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFL9014TRPBFA	文件：174.72 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9014TRPBF-BE3AB	文件：174.72 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014	文件：306.39 Kbytes Page：5 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRFR9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFR9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFR9014	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014	文件：321.35 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9014	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR9014,SiHFR9014) ?Straightlead(IRFU9014,SiHFU9014) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
IRFR9014	文件：299.06 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-5.1A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET?PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TR	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRL	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號：
IRFL9014TRPBF
功能描述：
MOSFET P-Chan 60V 1.1 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市富利微電子科技有限公司	IRFL9014TRPBF	VISHAY	23+	SOT-223	20540	保證進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市卓越微芯電子有限公司	IRFL9014TRPBF	VISHAY	2020+	SOT-223	9600	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市鼎欣微電子有限公司	IRFL9014TRPBF	IR	21+	SOT223	30000	只做正品原裝現(xiàn)貨	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFL9014TRPBF	Vishay Siliconix	24+	SOT-223	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市長旗科技有限公司	IRFL9014TRPBF	VISHAY/威世	23+	SOT-223	1390000	原裝進(jìn)口、正品保障、合作持久	詢價(jià)
深圳市納艾斯科技有限公司	IRFL9014TRPBF	VISHAY	2020+	SOT-223	8000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市祥瑞智科技有限公司	IRFL9014TRPBF	VISHAY	22+	SOT223	6000	原裝正品!!!優(yōu)勢庫存!0755-83210901	詢價(jià)
深圳市訊順達(dá)科技有限公司	IRFL9014TRPBF	VISHAY	21+	SOT-223-3	42500	全新原裝公司現(xiàn)貨	詢價(jià)
深圳市珩瑞科技有限公司	IRFL9014TRPBF	VISHAY/威世	21+	SOT-223	6000	原裝正品	詢價(jià)
深圳市芯祺盛科技有限公司	IRFL9014TRPBF	IR/VISHAY	17+	SOT-223	1444	主營IR可含稅只做全新原裝正品現(xiàn)貨	詢價(jià)

更多IRFL9014TRPBF供應(yīng)商更新時(shí)間2025-1-15 18:43:00

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