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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFD220	文件：175.37 Kbytes Page：6 Pages	Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A) HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFD220	文件：51.93 Kbytes Page：6 Pages	0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD220	文件：91 Kbytes Page：7 Pages	0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllothesepowerMOSFETsaredesignedforapplicationssuchasswitchingr	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFD220	文件：1.78249 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD220	文件：994.7 Kbytes Page：9 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD220_V01	文件：994.7 Kbytes Page：9 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD220PBF	文件：1.78249 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD220PBF	文件：1.8102 Mbytes Page：8 Pages	HEXFET? Power MOSFET HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFD220PBF	文件：994.7 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE220	文件：228.56 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst	IRF International Rectifier	IRF
IRFE220	文件：197.15 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF220	文件：325.04 Kbytes Page：7 Pages	3.5A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFF220	文件：45.46 Kbytes Page：2 Pages	N??HANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFF220	文件：80.91 Kbytes Page：2 Pages	AbsoluteMaximumRatings N-ChannelPowerMOSFET	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFM220A	文件：277.14 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFM220B	文件：727.8 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR/U220A	文件：258.54 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR220	文件：55.93 Kbytes Page：7 Pages	4.6A,200V,0.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFR220	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR220	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFD220
功能描述：
MOSFET N-Chan 200V 0.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市納艾斯科技有限公司	IRFD220	IR	2020+	DIP-4	8000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢(xún)價(jià)
深圳市珩瑞科技有限公司	IRFD220	IR	21+	DIP-4	6000	原裝正品	詢(xún)價(jià)
深圳市坤融電子科技有限公司	IRFD220	IR	24+	DIP-4	26900	只做原廠渠道可追溯貨源	詢(xún)價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFD220	IR	2021+	DIP-4	9000	原裝現(xiàn)貨,隨時(shí)歡迎詢(xún)價(jià)	詢(xún)價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRFD220	IR	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢(xún)價(jià)
綠盛電子(香港)有限公司	IRFD220	IR	2015+	HEXDIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!	詢(xún)價(jià)
深圳市昌和盛利電子有限公司	IRFD220	IR	23+	HEXDIP	19526		詢(xún)價(jià)
深圳市博浩通科技有限公司	IRFD220	IR	23+	DIP	8000	全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市星佑電子有限公司	IRFD220	MOT	05+	原廠原裝	4236	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢(xún)價(jià)
深圳市一線(xiàn)半導(dǎo)體有限公司	IRFD220	IOR	24+	DIP-4P	340		詢(xún)價(jià)

更多IRFD220供應(yīng)商更新時(shí)間2025-1-8 22:30:00

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