IRFD220中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
IRFD220規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All o these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 0.8A, 200V
? rDS(ON) = 0.800?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD220
- 功能描述：
MOSFET N-Chan 200V 0.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
DIP-4 |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 | ||
IR |
23+ |
DIP-4 |
30000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
23+24 |
DIP-4 |
59630 |
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IRFD220 |
100 |
100 |
詢價 | ||||
VISHAY |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
2023+ |
HD-1 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP-4 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
MOT |
23+ |
65480 |
詢價 |
