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首頁 >IRFR220>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR220	文件：55.93 Kbytes Page：7 Pages	4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFR220	文件：1.44698 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR220	文件：3.96242 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220	文件：816.14 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR220	文件：332.51 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFR220	文件：1.42322 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導體有限公司	DOINGTER
IRFR220_V01	文件：816.14 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR220A	文件：258.54 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFR220B	文件：665.75 Kbytes Page：9 Pages	200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFR220B	文件：596.55 Kbytes Page：10 Pages	200V N-Channel MOSFET GeneralDescription TheseN-Channelenhancementmodepowerfieldeffect transistorsareproducedusingONSemiconductor’s proprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitching performance,andw	ONSEMION Semiconductor 安森美半導體安森美半導體公司	ONSEMI
IRFR220BTM	文件：1.43474 Mbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=200V,ID=30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRFR220N	文件：132.73 Kbytes Page：10 Pages	Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent TypicalSMPSTopologies ●T	IRF International Rectifier	IRF
IRFR220N	文件：3.73907 Mbytes Page：10 Pages	SMPS MOSFET Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220N	文件：1.03454 Mbytes Page：3 Pages	Marking:TPM2006NHK3;Package:TO-252-3L;N-Channel MOSFET 200V, 6.0A, 0.65 Application Load/PowerSWwitching InterfacingSwitching BatteryManagementforUltraSmallPortable Electronics LogicLevelShift	TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司	TECHPUBLIC
IRFR220NPBF	文件：220.96 Kbytes Page：10 Pages	HEXFET Power MOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGatetoDrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent	IRF International Rectifier	IRF
IRFR220PBF	文件：1.85874 Mbytes Page：11 Pages	HEXFEP Power MOSFET HEXFEP?PowerMOSFETVdss=200VRDS(on)=0.80?ID=4.8A	IRF International Rectifier	IRF
IRFR220PBF	文件：1.44698 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR220PBF	文件：3.96242 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220R	文件：3.96242 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220TR	文件：1.44698 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導體	Vishay

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詳細參數(shù)

型號：
IRFR220
功能描述：
MOSFET N-Chan 200V 4.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
瀚佳科技(深圳)有限公司	IRFR220	IR	24+	TO252	9800	一級代理/全新原裝現(xiàn)貨/長期供應!	詢價
深圳市坤融電子科技有限公司	IRFR220	IR	24+	TO-252	4273	只做原廠渠道可追溯貨源	詢價
深圳市匯萊威科技有限公司	IRFR220	NXP/恩智浦	24+	TO-252	504346	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
柒號芯城電子商務(深圳)有限公司	IRFR220	IR	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價秒殺全網(wǎng)	詢價
深圳市星佑電子有限公司	IRFR220	IR	05+	TO-252	15000	原裝進口	詢價
綠盛電子(香港)有限公司	IRFR220	IR	2015+	TO252	19898	專業(yè)代理原裝現(xiàn)貨,特價熱賣!	詢價
深圳市聯(lián)世界科技有限公司	IRFR220	IR	9802		75	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市一線半導體有限公司	IRFR220	FAIRCHILD	24+	TO-252	71560		詢價
深圳市昌和盛利電子有限公司	IRFR220	IR	23+	TO-252	35890		詢價
深圳市科恒偉業(yè)電子有限公司	IRFR220	IR	2016+	TO-252	6528	房間原裝進口現(xiàn)貨假一賠十	詢價

更多IRFR220供應商更新時間2025-1-15 16:40:00

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