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IRFR/U220A中文資料仙童半導體數據手冊PDF規(guī)格書
IRFR/U220A規(guī)格書詳情
FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V
■ Low RDS(ON) : 0.626 ? (Typ.)
