零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFD121 | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul | HARRIS Harris Corporation | HARRIS | |
N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIGHDENSITYMOUNTINGPHOTOTRANSISTOROPTICALLYCOUPLEDISOLATORS DESCRIPTION TheIS121isanopticallycoupledisolatorconsistingofaninfraredlightemittingdiodeandNPNsiliconphototransistorinaspaceefficientdualinlineplasticpackage. FEATURES ?MarkedasFPT1. ?CurrentTransferRatioMIN.50 ?IsolationVoltage(3.75kVRMS,5.3kVPK) ?Allel | ISOCOM ISOCOM COMPONENTS | ISOCOM | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
詳細(xì)參數(shù)
- 型號(hào):
IRFD121
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INTERSIL |
2011+ |
DIP4 |
20000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
HAR |
22+ |
SOT-2591&NBS |
4500 |
全新原裝品牌專營 |
詢價(jià) | ||
24+ |
N/A |
48000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
HARRIS(哈利斯) |
23+ |
DIP4 |
6000 |
誠信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
MOT |
92+ |
DIP-4 |
4 |
原裝 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
IOR |
24+ |
DIP-4 |
184 |
詢價(jià) | |||
IR |
23+ |
DIP-4 |
6100 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
SILICONIX |
16+ |
(DIP) |
9700 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) |
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