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IRF630N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630N

FastSwitchingSpeed

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630N

N-ChannelMOSFETTransistor

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF630N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630NL

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NL

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NL

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630NLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF630M

  • 制造商：

    ST

  • 功能描述：

    N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET

供應商型號品牌批號封裝庫存備注價格
ST
23+
TO-220
9562
詢價
ST
2015+
TO220A
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
ST
24+
TO2203
26
詢價
ST
05+
原廠原裝
4708
只做全新原裝真實現(xiàn)貨供應
 詢價
ST
17+
TO-220
6200
詢價
ST
23+
TO220-3
9280
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
ST
2016+
TO220
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
ST
24+
DIP3
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
ST
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
23+
TO-220
50000
專做原裝正品,假一罰百!
 詢價
更多IRF630M供應商 更新時間2025-4-26 14:00:00

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