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IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NS

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530NS

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530NSPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSTRRPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530PBF

Dynamicdv/dtRating,FastSwitching,EaseofParalleling,SimpleDriveRequirements

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IR
23+24
TO-220AB
39820
主營IR.原裝原盤原盒、提供BOM一站式配單
 詢價
INFINEON/英飛凌
2022+
50
6600
只做原裝,假一罰十,長期供貨。
 詢價
INFINEON/英飛凌
2023+
TO-220(
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
IR
23+
NA/
3275
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
IR
21+
TO220
15
原裝現(xiàn)貨假一賠十
 詢價
更多IRF530NPBF-GZ供應(yīng)商 更新時間2025-3-16 14:00:00

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