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IRF530NSTRLPBF規(guī)格書詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF530NSTRLPBF
- 功能描述:
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
TO-252-3 |
65300 |
一級代理/放心采購 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
160113 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
22000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON |
22+ |
NA |
800 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
TO-263 |
501301 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-263-2 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-263-2 |
25630 |
原裝正品 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-263 |
33316 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-263-2 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
24+ |
TO-263 |
7500 |
詢價 |