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IRF530NPBF

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530NPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF530NPBF

Advanced Process Technology

IRF

International Rectifier

IRF530NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NS

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530NS

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530NSPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSTRRPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530PBF

Dynamicdv/dtRating,FastSwitching,EaseofParalleling,SimpleDriveRequirements

IRF

International Rectifier

IRF530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530PBF

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530R

N-ChannelPowerMOSFETsAvalancheEnergyRated

HARRIS

Harris Corporation

IRF530S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530S

PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF530S

HEXFETPowerMOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF530NP

  • 功能描述：

    MOSFET MOSFT 100V 17A 90mOhm 24.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-220
10000
深圳市勤思達科技有限公司主營IR系列全新原裝正品,公司現(xiàn)貨供應(yīng)IRF530NPBF 歡迎咨詢洽談。
 詢價
INFINEON
23+
50000
原裝正品
 詢價
IR
23+
TO-220
20124
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
0829+
TO220
50000
深圳現(xiàn)貨
 詢價
IR
24+
TO-220
20000
原裝正品現(xiàn)貨
 詢價
IR
24+
TO-220
20000
進口原裝現(xiàn)貨
 詢價
INFINEON/IR
1907+
NA
26100
20年老字號,原裝優(yōu)勢長期供貨
 詢價
Infineon(英飛凌)
24+
TO-220(TO-220-3)
5996
100%原裝正品真實庫存,支持實單
 詢價
IR
08+/09+
TO-220
1256
全新原裝絕對自己公司現(xiàn)貨
 詢價
更多IRF530NP供應(yīng)商 更新時間2025-1-12 11:03:00

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