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IRF520S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF520S

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導體

IRF520SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF520V

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VL

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF520VPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VS

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    IRF520R

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | TO-220AB

供應商型號品牌批號封裝庫存備注價格
har
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
har
24+
500000
行業(yè)低價,代理渠道
 詢價
har
2023+
原廠封裝
50000
原裝現(xiàn)貨
 詢價
FAIRCHILD
06+
原廠原裝
12216
只做全新原裝真實現(xiàn)貨供應
 詢價
FAIRCHILD
2023+
SMD
3400
安羅世紀電子只做原裝正品貨
 詢價
IR
24+
D2-Pak
8866
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價
IR
23+
TO-263
35890
詢價
IR
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多IRF520R供應商 更新時間2025-4-26 14:00:00

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