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IRF1405PBF

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=5.3m? ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS

IRF

International Rectifier

IRF1405PBF

Advanced Process Technology

IRF

International Rectifier

IRF1405PBF_15

Advanced Process Technology

IRF

International Rectifier

IRF1405S

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405S

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405SLPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF1405SPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405ZL

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZLPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF1405PBF

  • 功能描述：

    MOSFET MOSFT 55V 133A 5.3mOhm 170nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-220
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì)
 詢價(jià)
INFINEON/IR
1907+
NA
10550
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
INFINEON
22+
TO-220
72000
原裝正品可支持驗(yàn)貨,歡迎咨詢
 詢價(jià)
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價(jià)
23+
TO-220AB
12550
專注原裝正品現(xiàn)貨特價(jià)中量大可定
 詢價(jià)
IR
14+
TO-220
9860
大量原裝進(jìn)口現(xiàn)貨,一手貨源,一站式服務(wù),可開(kāi)17%增
 詢價(jià)
IR
23+
TO-220
20000
原裝正品,假一罰十
 詢價(jià)
更多IRF1405PBF供應(yīng)商 更新時(shí)間2024-10-26 11:29:00

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